?2000 fairchild semiconductor international ffpF10F150S rev. f, september 2000 damper diode absolute maximum ratings t c =25 c unless otherwise noted thermal characteristics electrical characteristics t c =25 c unless otherwise noted * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter value units v rrm peak repetitive reverse voltage 1500 v i f(av) average rectified forward current @ t c = 125 c10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case 3.0 c/w symbol parameter min. typ. max. units v fm * maximum instantaneous forward voltage i f = 10a i f = 10a t c = 25 c t c = 125 c - - - - 1.6 1.4 v i rm * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 125 c - - - - 10 80 a t rr maximum reverse recovery time (i f =1a, di/dt = 50a/ s) --170ns t fr maximum forward recovery time (i f =6.5a, di/dt = 50a/ s) --250ns v frm maximum forward recovery voltage - - 14 v ffpF10F150S features ? high voltage and high reliability high speed switching low forward voltage to-220f 1 2 1. cathode 2. anode applications suitable for damper diode in horizontal deflection circuits
?2000 fairchild semiconductor international rev. f, september 2000 ffpF10F150S typical characteristics typical characteristics figure 1. typical forward voltage drop vs. forward current figure 3. typical junction capacitance figure 5. typical stored charge vs. forward current figure 2. typical reverse current vs. reverse voltage figure 4. typical reverse recovery time vs. forward current figure 6. forward current derating curve 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 t j = 25 o c t j = 125 o c forward voltage , v f [v] forward current , i f [a] 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200 typical capacitance at 0v = 150 pf capacitance , cj [pf] reverse voltage , v r [v] 12345678910 0 500 1000 1500 2000 di/dt = 100a/ s di/dt = 50a/ s stored recovery charge , q rr [nc] forward current , i f [a] 0 300 600 900 1200 1500 0.001 0.01 0.1 1 10 100 t j = 25 o c t j = 125 o c t j = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 12345678910 0 100 200 300 400 di/dt = 100a/ s di/dt = 50a/ s reverse recovery time , t rr [ns] forward current , i f [a] 80 100 120 140 160 0 5 10 15 dc average forward current , i f(av) [a] case temperature , t c [ o c]
?2000 fairchild semiconductor international rev. f, september 2000 ffpF10F150S package dimensions to-220f 2l dimensions in millimeters 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45 ) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ? 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ? 0.05
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